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Journal of Information Science and Engineering, Vol. 26 No. 2, pp. 597-610 (March 2010)

Implementation of a 2.45GHz Passive RFID Transponder Chip in 0.18gm CMOS*

MENG-LIEH SHEU, YU-SHENG TIAO, HANG-YU FAN AND JI-JIN HUANG
Department of Electrical Engineering
National Chi-Nan University
Puli, Nantou Hsien, 545 Taiwan

In this paper, a passive 2.45GHz band RFID transponder chip for high data rate communication and with low power consumption has been presented. The passive transponder chip contains five parts: a voltage multiplier converts received RF signal to the DC power supply, a mode selector decides the operating status, a low power dissipation LC-tank voltage control oscillator, a 32-bit read only memory, and a modulator. The RFto- DC circuit can generate the required power supply and bias voltages from received 2.45GHz RF signal with 250mV amplitude. The data stored in 32-bit ROM can modulate the 2.45GHZ carrier generated by VCO at up to 153Mbps for backscattering the data. The chip was designed and implemented by using TSMC 0.18gm 1P6M CMOS process. The chip area is 905gm 652gm with simulated power consumption less than 4mW. The measurement and simulation results are well matched.

Keywords: RFID, passive, transponder, ASK, LC-tank VCO

Full Text () Retrieve PDF document (201003_16.pdf)

Received March 18, 2008; revised September 24, 2008 & January 14, 2009; accepted May 7, 2009.
Communicated by Liang-Gee Chen.
* This work has been partially supported by the National Science Council of Taiwan, R.O.C., under grants No. NSC 96-2221-E-260-027 and NSC 97-2221-E-260-029. The authors would like to give their thanks for the help from Chip Implementation Center on the chip implementation.